Heterogeneous integration

SiGe-based MEMS

Imec’s SiGeMEMS technology is based on a MEMS-last approach, where the MEMS are processed after and on top of the CMOS circuits. It enables monolithic integration of CMOS and MEMS, integrating MEMS devices with the driving and readout electronics on the same die. This leads to a better performance compared to other integration schemas: there is a better signal to noise ratio through a reduced interconnect parasitic resistance and capacitance, a smaller die size and package, and lower power consumption.

The SiGeMEMS platform is versatile. It consists of standard and optional modules that can be processed at ~450ºC above standard CMOS, with many possibilities to tune and optimize the modules. The standard modules provide e.g. a CMOS protection layer, MEMS via and poly-SiGe electrode, an anchor and poly-SiGe structural layer, and thin-film poly-SiGe packaging. Optional modules (e.g. optical, piezoresistive, probes) can be added depending on the application.

With this platform, imec has built a range of outstanding MEMS. On example is a reliable 11 megapixel micro-mirror array for high-end industrial applications.