We invite you to participate in the 6th International Silicon-Germanium Technology and Device Meeting (2012 ISTDM) to be held June 4-6, 2012 in Berkeley, California. Researchers and students all over the world are drawn to the University of California at Berkeley by its reputation as a pre-eminent research and teaching institution and its proximity to Silicon Valley, as well as the beautiful Bay Area weather. Your participation will add to the vibrant atmosphere of intellectual exchange at the frontier of knowledge, in a collegial environment.

Silicon-germanium (SiGe) has enabled key advancements in silicon-based microelectronics technology, including heterojunction bipolar transistors (HBTs) for RF communication and strained metal-oxide-semiconductor field-effect transistors (MOSFETs) for high-performance digital computing, and will enable more energy-efficient electronic devices in the future. The ISTDM provides a forum for researchers to present their latest results on emerging/new SiGe technology, devices, circuits, and applications. The conference will comprise invited sessions, regular oral presentations in parallel sessions, and lively poster and panel sessions. We hope that you will come to share your ideas and enjoy all that the conference and Berkeley has to offer!

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