PhD

Fab processing step development

• Selective epitaxy for optical devices
• Atomic Layer Deposition for applications in nanotechnology
• Structural and compositional analysis of future generation m
• Electrochemical deposition
• Chemical Mechanical Polishing
• Plasma damage of low-k dielectrics
• Plasma diagnostics
• Ab initio simulation of novel material
• Novel devices modeling of transport properties
• New device concepts
• Alternative interconnect materials
• Atomic-layer deposition of novel metallic thin films
• Towards the control of nanoforces
• 3D thin-film batteries and supercapacitors
• Nanoscopic analysis of electrical and structural properties
• Organic semiconductor materials and devices
• Atomic scale observations of atom - atom clustering
• Three-dimensional electrical analysis using scanning probe c
• Structural and compositional analysis of future generation m
• Graphene

Competence center : Epitaxial growth

Selective epitaxy for optical devices

The semiconductor ICT industry continues its never-ending pursuit of new approaches for fabricating integrated circuits to reduce device cost and improve device performance. Remarkable improvements have been obtained by shrinking the physical dimensions of the transistors, using innovative architectures like multi-gate structures and non-standard substrate orientations, and more recently, by altering the materials used to construct the devices. This resulted in faster transistors, higher transistor densities, but also into a tremendous increase of the device complexity. For future device generations, many different approaches are considered, for which the efficient engineering of new materials and architectures are the main challenge to improve device performance.

In a next phase, there will be a strong focus on Silicon Photonics for optical interconnects. Optical elements like wave guides, Ge Photodetectors and III/V laser diodes are expected to be integrated in current silicon technology.
The fabrication of the (new) materials for future electrical device concepts and Si photonic devices is generally based on the use of epitaxial growth techniques, especially Chemical Vapor Deposition (CVD). Both applications have in common that the defect formation during epitaxial growth is of crucial importance as there is a major impact on device performance. Within this PhD, the candidate will perform an in-depth assessment of the epitaxial growth of (new) Group IV semiconductors to be used in for the applications mentioned before. Special attention has to go to the fundamental understanding of the epitaxial growth techniques as well as the material properties. This includes a study of the root cause for defect formation and the impact of these defects on device performance. The recruited scientist receives a multi-disciplinary training in material science, in materials characterization as well as in technological device aspects.

Daily supervisor: Dr. Roger Loo